2SD2301 silicon npn triple diffused application ctv horizontal deflection output features high breakdown voltage v cbo = 1500 v outline 1. base
2. collector
3. emitter to-3pfm 1 2 3
2SD2301 2 absolute maximum ratings (ta = 25c) item symbol ratings unit collector to base voltage v cbo 1500 v collector to emitter voltage v ceo 800 v emitter to base voltage v ebo 6v collector current i c 6a collector peak current i c(peak) 7a collector surge current i c(surge) 16 a collector power dissipation p c * 1 50 w junction temperature tj 150 c storage temperature tstg C55 to +150 c note: 1. value at t c = 25c. electrical characteristics (ta = 25c) item symbol min typ max unit test conditions collector to emitter breakdown voltage v (br)ceo 800 v i c = 10 ma, r be = emitter to base breakdown voltage v (br)ebo 6vi e = 10 ma, i c = 0 collector cutoff current i ces 500 a v ce = 1500 v, r be = 0 dc current transfer ratio h fe 30 v ce = 5 v, i c = 1 a collector to emitter saturation voltage v ce(sat) 5 v i c = 5 a, i b = 1 a base to emitter saturation voltage v be(sat) 1.5 v i c = 5 a, i b = 1 a fall time t f 0.8 s i cp = 5 a, i b1 = 1 a, i b2 ? C2 a
2SD2301 3 0 case temperature t c ( c) collector power dissipation pc (w) maximum collector dissipation curve 50 100 150 20 60 40 collector to emitter voltage v ce (v) collector current i c (a) 0 area of safe operation 400 800 1,200 1,600 2,000 4 8 12 20 16 0.5 ma (800 v, 4 a) (100 v, 16 a) f = 15.75 khz
ta = 25 c for picture tube arcing collector to emitter voltage v ce (v) collector current i c (a) 0 typical output characteristics 246810 1 2 3 4 5 i b = 0 t c = 25 c 0.1 a 0.2 a 0.3 a 0.4 a 0.5 a 0.6 a 0.7 a 0.8 a 1 2 5 10 20 50 100 collector current i c (a) dc current transfer ratio h fe 0.01 0.03 0.1 0.3 1.0 3 6 dc current transfer ratio
vs. collector current t c = ?5 c 75 c 25 c v ce = 5 v
pulse
2SD2301 4 0.05 0.1 0.2 0.5 1.0 2 5 collector current i c (a) 0.01 0.03 0.1 0.3 1.0 3 6 collector to emitter saturation voltage v ce (sat) (v) collector to emitter saturation voltage
vs. collector current l c = 5 l b
pulse t c = ?5 c 25 c 75 c collector current i c (a) base to emitter saturation voltage v be (sat) (v) 0.1 0.2 1.0 2 5 0.5 0.01 0.03 0.1 0.3 1.0 3 6 base to emitter saturation voltage
vs. collector current l c = 5 l b
pulse t c = ?5 c 25 c 75 c 0 2 4 6 8 10 base current i b (a) collector to emitter saturation voltage v ce (sat) (v) 0.05 0.1 0.2 0.5 1.0 2 5 collector to emitter saturation voltage
vs. base current l c = 2 a 6 a 4 a t c = 25 c
pulse
2SD2301 5 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd.
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